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* -12A, -60V, RDS(on) = 0.12Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanch.

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF17P10

FQPF17N08

FQPF17N08L

FQPF17N40

FQPF10N20

FQPF10N20C

FQPF10N50CF

FQPF10N60

FQPF10N60C

FQPF10N60CF

FQPF10N65

FQPF11N40

FQPF11N40C